Electron Beam Prober
Encyclopedia
The Electron Beam Prober (E-beam Prober) is a specialized adaption of a standard Scanning Electron Microscope
(SEM) that is used for semiconductor
failure analysis
. While a standard SEM may be operated in a voltage range of 25KeV to 30KeV, the E-beam Prober typically operates at 1KeV. The E-beam Prober is capable of measuring voltage and timing waveforms on internal semiconductor signal structures. Waveforms may be measured on metal line, polysilicon and diffusion structures that have an electrically active, changing signal. The operation of the prober is similar to that of a sampling oscilloscope
. A continuously looping, repeating test pattern must be applied to the device-under-test (DUT). E-beam probers are used primarily for front side semiconductor analysis. With the advent of flip-chip
technology, many E-beam probers have been replaced with back side analysis instruments.
During waveform acquisition mode, the primary electron beam is focused on a single point on the device surface. As the DUT cycles through its test pattern, the signal at the point being probed changes. The signal changes produce a corresponding change in the local electric field surrounding the point being probed. This affects the number of secondary electrons that escape the device surface and reach the detector. Since electrons are negatively charged, a conductor at a +5 Volt potential inhibits the escape of electrons, while a 0 Volt potential allows a greater number of electrons to reach the detector. By monitoring these changes in potential, a voltage and timing waveform may be produced for the signal at the point being probed.
Scanning electron microscope
A scanning electron microscope is a type of electron microscope that images a sample by scanning it with a high-energy beam of electrons in a raster scan pattern...
(SEM) that is used for semiconductor
Semiconductor
A semiconductor is a material with electrical conductivity due to electron flow intermediate in magnitude between that of a conductor and an insulator. This means a conductivity roughly in the range of 103 to 10−8 siemens per centimeter...
failure analysis
Failure analysis
Failure analysis is the process of collecting and analyzing data to determine the cause of a failure. It is an important discipline in many branches of manufacturing industry, such as the electronics industry, where it is a vital tool used in the development of new products and for the improvement...
. While a standard SEM may be operated in a voltage range of 25KeV to 30KeV, the E-beam Prober typically operates at 1KeV. The E-beam Prober is capable of measuring voltage and timing waveforms on internal semiconductor signal structures. Waveforms may be measured on metal line, polysilicon and diffusion structures that have an electrically active, changing signal. The operation of the prober is similar to that of a sampling oscilloscope
Oscilloscope
An oscilloscope is a type of electronic test instrument that allows observation of constantly varying signal voltages, usually as a two-dimensional graph of one or more electrical potential differences using the vertical or 'Y' axis, plotted as a function of time,...
. A continuously looping, repeating test pattern must be applied to the device-under-test (DUT). E-beam probers are used primarily for front side semiconductor analysis. With the advent of flip-chip
Flip chip
Flip chip, also known as Controlled Collapse Chip Connection or its acronym, C4, is a method for interconnecting semiconductor devices, such as IC chips and Microelectromechanical systems , to external circuitry with solder bumps that have been deposited onto the chip pads...
technology, many E-beam probers have been replaced with back side analysis instruments.
Theory of operation
The E-beam prober generates a SEM image by raster-scanning a focused electron beam over a selected region of the semiconductor surface. The high energy electrons in the primary beam strike the surface of the silicon, producing a number of low energy secondary electrons. The secondary electrons are guided back up through the SEM column to a detector. The varying numbers of secondary electrons reaching the detector are interpreted to produce the SEM image.During waveform acquisition mode, the primary electron beam is focused on a single point on the device surface. As the DUT cycles through its test pattern, the signal at the point being probed changes. The signal changes produce a corresponding change in the local electric field surrounding the point being probed. This affects the number of secondary electrons that escape the device surface and reach the detector. Since electrons are negatively charged, a conductor at a +5 Volt potential inhibits the escape of electrons, while a 0 Volt potential allows a greater number of electrons to reach the detector. By monitoring these changes in potential, a voltage and timing waveform may be produced for the signal at the point being probed.