Drift-field transistor
Encyclopedia
The drift-field transistor, also called the drift transistor or graded base transistor, is a type of high-speed bipolar junction transistor
having a doping-engineer
ed electric field
in the base to reduce the charge carrier
base transit time.
Invented by Herbert Kroemer
at the Central Bureau of Telecommunications Technology of the German Postal Service, in 1953, it continues to influence the design of modern high-speed bipolar junction transistors.
Bipolar junction transistor
|- align = "center"| || PNP|- align = "center"| || NPNA bipolar transistor is a three-terminal electronic device constructed of doped semiconductor material and may be used in amplifying or switching applications. Bipolar transistors are so named because their operation involves both electrons...
having a doping-engineer
Doping (semiconductor)
In semiconductor production, doping intentionally introduces impurities into an extremely pure semiconductor for the purpose of modulating its electrical properties. The impurities are dependent upon the type of semiconductor. Lightly and moderately doped semiconductors are referred to as extrinsic...
ed electric field
Electric field
In physics, an electric field surrounds electrically charged particles and time-varying magnetic fields. The electric field depicts the force exerted on other electrically charged objects by the electrically charged particle the field is surrounding...
in the base to reduce the charge carrier
Charge carrier
In physics, a charge carrier is a free particle carrying an electric charge, especially the particles that carry electric currents in electrical conductors. Examples are electrons and ions...
base transit time.
Invented by Herbert Kroemer
Herbert Kroemer
Herbert Kroemer , a professor of electrical and computer engineering at the University of California, Santa Barbara, received his Ph.D. in theoretical physics in 1952 from the University of Göttingen, Germany, with a dissertation on hot electron effects in the then-new transistor, setting the stage...
at the Central Bureau of Telecommunications Technology of the German Postal Service, in 1953, it continues to influence the design of modern high-speed bipolar junction transistors.