Ramtron International
Encyclopedia
Ramtron International Corporation , located in Colorado Springs, CO, is the main supplier of F-RAM
chips and integrated semiconductor products. The company sells serial and parallel ferroelectric random access memory (F-RAM) devices and Processor Companion devices that integrate a variety of common discrete analog and mixed-signal functions for processor-based systems. The company also sells non-memory devices enabled by F-RAM technology such as non-volatile state savers and IC-based event data recorders. Ramtron is a fabless company with manufacturing partners in the United States and Japan and technology partnerships worldwide.
(dynamic random access memory), among others. RAM type devices are easy to use, offer high performance, but they share a common vulnerability: stored memory is lost when the power supply is removed.
An F-RAM chip contains a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O3], commonly referred to as PZT. The Zr/Ti atoms in the PZT change polarity in an electric field, thereby producing a binary switch. Unlike RAM devices, F-RAM retains its data memory when power is shut off or interrupted, due to the PZT crystal maintaining polarity. This unique property makes F-RAM a low power, non-volatile memory.
Like F-RAM, ROM (read only memory) is a non-volatile memory that does not lose its data content when power is removed. Newer generation ROM, like EEPROM
(electrically erasable programmable read only memory) and flash memory
, can be erased and re-programmed multiple times, but they require high voltage and write very slowly. ROM-based technologies eventually wear out (in as little as 100,000 cycles), making them unsuitable for high-endurance industrial applications.
F-RAM has 10,000 times greater endurance and 3,000 times less power consumption than a typical serial EEPROM
device, and nearly 500 times the write speed.
F-RAM combines RAM and ROM functionality into a single package that provide fast writes, high endurance and low power consumption.
F-RAM performs read and write operations at the same speed. Because F-RAM writes data at bus speed, there are no delays before the written data becomes non-volatile. Floating gate memories have long write delays of 5 milliseconds. F-RAM writes in nanoseconds.
High endurance
F-RAM offers virtually unlimited write endurance, which allows it to write much more often than non-volatile memory devices. Floating gate devices experience a hard failure and stop writing in as little as 100,000 cycles, making them unsuitable for write-intensive applications.
Low power consumption
F-RAM operates without a charge pump, enabling low power consumption. Floating gate devices demand high voltage during write operations. F-RAM writes at the native voltage of the manufacturing process: 5V, 3V, 1.8V, or even less on more advanced processes.
In recent years Ramtron has extended their product offering beyond standard memories to include Integrated Products, Wireless Products, and a growing line of mixed signal products. All of these newer product lines integrate F-RAM embedded memories with application-specific functionality such as wireless interfaces, processor & power monitoring, data logging, and real-time timekeeping.
In 1998, RAMTRON created ESDRAM http://findarticles.com/p/articles/mi_m0EIN/is_1998_July_16/ai_20909162, which was at the time the fastest synchronous DRAM. It was frequently used in place of fast SRAM in high performance embedded systems such as communications, DSP, and computer boards.
Ferroelectric RAM
Ferroelectric RAM is a random-access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile memory technologies that offer the same functionality as Flash memory...
chips and integrated semiconductor products. The company sells serial and parallel ferroelectric random access memory (F-RAM) devices and Processor Companion devices that integrate a variety of common discrete analog and mixed-signal functions for processor-based systems. The company also sells non-memory devices enabled by F-RAM technology such as non-volatile state savers and IC-based event data recorders. Ramtron is a fabless company with manufacturing partners in the United States and Japan and technology partnerships worldwide.
History
Ramtron was founded in 1984 in Colorado Springs, Colorado. A prototype F-RAM device was unveiled at the International Solid State Circuits Conference (ISSCC) in 1988.F-RAM Technology
F-RAM (ferroelectric random access memory) offers a unique set of features relative to other semiconductor technologies. Established semiconductor memories can be divided into two categories: volatile and nonvolatile. Volatile memory includes SRAM (static random access memory) and DRAMDram
Dram or DRAM may refer to:As a unit of measure:* Dram , an imperial unit of mass and volume* Armenian dram, a monetary unit* Dirham, a unit of currency in several Arab nationsOther uses:...
(dynamic random access memory), among others. RAM type devices are easy to use, offer high performance, but they share a common vulnerability: stored memory is lost when the power supply is removed.
An F-RAM chip contains a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O3], commonly referred to as PZT. The Zr/Ti atoms in the PZT change polarity in an electric field, thereby producing a binary switch. Unlike RAM devices, F-RAM retains its data memory when power is shut off or interrupted, due to the PZT crystal maintaining polarity. This unique property makes F-RAM a low power, non-volatile memory.
Like F-RAM, ROM (read only memory) is a non-volatile memory that does not lose its data content when power is removed. Newer generation ROM, like EEPROM
EEPROM
EEPROM stands for Electrically Erasable Programmable Read-Only Memory and is a type of non-volatile memory used in computers and other electronic devices to store small amounts of data that must be saved when power is removed, e.g., calibration...
(electrically erasable programmable read only memory) and flash memory
Flash memory
Flash memory is a non-volatile computer storage chip that can be electrically erased and reprogrammed. It was developed from EEPROM and must be erased in fairly large blocks before these can be rewritten with new data...
, can be erased and re-programmed multiple times, but they require high voltage and write very slowly. ROM-based technologies eventually wear out (in as little as 100,000 cycles), making them unsuitable for high-endurance industrial applications.
F-RAM has 10,000 times greater endurance and 3,000 times less power consumption than a typical serial EEPROM
EEPROM
EEPROM stands for Electrically Erasable Programmable Read-Only Memory and is a type of non-volatile memory used in computers and other electronic devices to store small amounts of data that must be saved when power is removed, e.g., calibration...
device, and nearly 500 times the write speed.
F-RAM combines RAM and ROM functionality into a single package that provide fast writes, high endurance and low power consumption.
F-RAM Technology Benefits
Fast write speedF-RAM performs read and write operations at the same speed. Because F-RAM writes data at bus speed, there are no delays before the written data becomes non-volatile. Floating gate memories have long write delays of 5 milliseconds. F-RAM writes in nanoseconds.
High endurance
F-RAM offers virtually unlimited write endurance, which allows it to write much more often than non-volatile memory devices. Floating gate devices experience a hard failure and stop writing in as little as 100,000 cycles, making them unsuitable for write-intensive applications.
Low power consumption
F-RAM operates without a charge pump, enabling low power consumption. Floating gate devices demand high voltage during write operations. F-RAM writes at the native voltage of the manufacturing process: 5V, 3V, 1.8V, or even less on more advanced processes.
Products
Ramtron's F-RAM non-volatile memory product line features industry-standard serial and parallel interface memories; industry standard package types; and 4-kilobit, 16-kilobit, 64-kilobit, 256-kilobit, 1-megabit, 2-megabit, and 4-megabit densities.In recent years Ramtron has extended their product offering beyond standard memories to include Integrated Products, Wireless Products, and a growing line of mixed signal products. All of these newer product lines integrate F-RAM embedded memories with application-specific functionality such as wireless interfaces, processor & power monitoring, data logging, and real-time timekeeping.
In 1998, RAMTRON created ESDRAM http://findarticles.com/p/articles/mi_m0EIN/is_1998_July_16/ai_20909162, which was at the time the fastest synchronous DRAM. It was frequently used in place of fast SRAM in high performance embedded systems such as communications, DSP, and computer boards.